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Photoelectrochemical response of GaN, InGaN, and GaNP nanowire ensembles
Justus Liebig Univ Giessen, Germany.
Univ Bremen, Germany.
Univ Bremen, Germany.
Justus Liebig Univ Giessen, Germany.
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2018 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 123, no 17, article id 175703Article in journal (Refereed) Published
Abstract [en]

The photoelectrochemical responses of GaN, GaNP, and InGaN nanowire ensembles are investigated by the electrical bias dependent photoluminescence, photocurrent, and spin trapping experiments. The results are explained in the frame of the surface band bending model. The model is sufficient for InGaN nanowires, but for GaN nanowires the electrochemical etching processes in the anodic regime have to be considered additionally. These processes lead to oxygen rich surface (GaxOy) conditions as evident from energy dispersive X-ray fluorescence. For the GaNP nanowires, a bias dependence of the carrier transfer to the electrolyte is not reflected in the photoluminescence response, which is tentatively ascribed to a different origin of radiative recombination in this material as compared to (In) GaN. The corresponding consequences for the applications of the materials for water splitting or pH-sensing will be discussed. Published by AIP Publishing.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2018. Vol. 123, no 17, article id 175703
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-148098DOI: 10.1063/1.5024334ISI: 000431651600046OAI: oai:DiVA.org:liu-148098DiVA, id: diva2:1211331
Available from: 2018-05-30 Created: 2018-05-30 Last updated: 2018-05-30

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Buyanova, Irina
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Surface Physics and ChemistryFaculty of Science & Engineering
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