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Phase separation within NiSiN coatings during reactive HiPIMS discharges: A new pathway to grow NixSi nanocrystals composites at low temperature
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska fakulteten.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-6602-7981
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska fakulteten. Tokyo Metropolitan Univ, Japan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-1744-7322
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2018 (engelsk)Inngår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 454, s. 148-156Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The precise control of the growth nanostructured thin films at low temperature is critical for the continued development of microelectronic enabled devices. In this study, nanocomposite Ni-Si-N thin films were deposited at low temperature by reactive high-power impulse magnetron sputtering. A composite Ni-Si target (15 at.% Si) in combination with a Ar/N-2 plasma were used to deposit films onto Si(0 01) substrates, without any additional substrate heating or any post-annealing. The films microstructure changes from a polycrystalline to nanocomposite structure when the nitrogen content exceeds 16 at.%. X-ray diffraction and (scanning) transmission electron microscopy analyses reveal that the microstructure consists of nanocrystals, NixSi (x amp;gt; 1) 7-8 nm in size, embedded in an amorphous SiN x matrix. It is proposed that this nanostructure is formed at low temperatures due to the repeated-nucleation of NixSi nanocrystals, the growth of which is restricted by the formation of the SiNx phase. X-ray photoelectron spectroscopy revealed the trace presence of a ternary solid solution mainly induced by the diffusion of Ni into the SiNx matrix. Four-probe electrical measurements reveal all the deposited films are electrically conducing.

sted, utgiver, år, opplag, sider
ELSEVIER SCIENCE BV , 2018. Vol. 454, s. 148-156
Emneord [en]
Silicon nitride; NiSi nanocrystals; HiPIMS; Nanocomposite
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Identifikatorer
URN: urn:nbn:se:liu:diva-149675DOI: 10.1016/j.apsusc.2018.05.061ISI: 000436944500017OAI: oai:DiVA.org:liu-149675DiVA, id: diva2:1235318
Merknad

Funding Agencies|Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Swedish Research Council [VR 621-2014-4882]

Tilgjengelig fra: 2018-07-25 Laget: 2018-07-25 Sist oppdatert: 2018-07-25

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Keraudy, JulienBoyd, RobertShimizu, TetsuhideHelmersson, Ulf
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