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Efficient perovskite light-emitting diodes based on a solution-processed tin dioxide electron transport layer
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering.
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2018 (English)In: Journal of Materials Chemistry C, ISSN 2050-7526, E-ISSN 2050-7534, Vol. 6, no 26, p. 6996-7002Article in journal (Refereed) Published
Abstract [en]

To achieve high-performance perovskite light-emitting diodes (PeLEDs), an appropriate functional layer beneath the perovskite emissive layer is significantly important to modulate the morphology of the perovskite film and to facilitate charge injection and transport in the device. Herein, for the first time, we report efficient n-i-p structured PeLEDs using solution-processed SnO2 as an electron transport layer. Three-dimensional perovskites, such as CH(NH2)(2)PbI3 and CH3NH3PbI3, are found to be more chemically compatible with SnO2 than with commonly used ZnO. In addition, SnO2 shows good transparency, excellent morphology and suitable energy levels. These properties make SnO2 a promising candidate in both three-and low-dimensional PeLEDs, among which a high external quantum efficiency of 7.9% has been realized. Furthermore, interfacial materials that are widely used to improve the device performances of ZnO-based PeLEDs are also applied on SnO2-based PeLEDs and their effects have been systematically studied. In contrast to ZnO, SnO2 modified by these interfacial materials shows detrimental effects due to photoluminescence quenching.

Place, publisher, year, edition, pages
ROYAL SOC CHEMISTRY , 2018. Vol. 6, no 26, p. 6996-7002
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-150497DOI: 10.1039/c8tc01871eISI: 000441100700014OAI: oai:DiVA.org:liu-150497DiVA, id: diva2:1241681
Note

Funding Agencies|ERC [717026]; Carl Tryggers Stiftelse; China Scholarship Council; European Commission Marie Sklodowska-Curie Actions [691210]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]; Vinnova; Marie Sklodowska-Curie Fellow [2016-02051]; State Key Laboratory of Luminescent Materials and Devices at South China University of Technology [2017-skllmd-05]; State Key Lab of Silicon Materials at Zhejiang University [SKL2017-03]

Available from: 2018-08-24 Created: 2018-08-24 Last updated: 2018-09-11

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Wang, HeyongYu, HonglingXu, WeidongYuan, ZhongchengYan, ZhiboWang, Chuan FeiLiu, XianjieFahlman, MatsLiu, XiaokeGao, Feng
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