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Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
SINTEF Materials Physics, Oslo, Norway; University of Lisbon, Instituto Superior Tecnico, Lisbon, Portugal.
SINTEF Materials Physics, Oslo, Norway.
University of Oslo, Department of Physics, Oslo, Norway.
SINTEF Instrumentation, Oslo, Norway.
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2018 (English)In: SciPost Physics, ISSN 2542-4653, Vol. 5, no 3, p. 1-17Article in journal (Refereed) Published
Abstract [en]

Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar cells. The formation of a delocalized band demands high concentration of the foreign element, but the precipitation behavior of B in the 3C polymorph of SiC is not well known. Here, probe-corrected scanning transmission electron microscopy and secondary-ion mass spectrometry are used to investigate precipitation mechanisms in B-implanted 3C-SiC as a function of temperature. Point-defect clustering was detected after annealing at 1273 K, while stacking faults, B-rich precipitates and dislocation networks developed in the 1573 - 1773 K range. The precipitates adopted the rhombohedral B13C2 structure and trapped B up to 1773 K. Above this temperature, higher solubility reduced precipitation and free B diffused out of the implantation layer. Dopant concentrations E19 at.cm-3 were achieved at 1873 K.

Place, publisher, year, edition, pages
Amsterdam, Netherlands: SciPost Foundation , 2018. Vol. 5, no 3, p. 1-17
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-150976DOI: 10.21468/scipostphys.5.3.021OAI: oai:DiVA.org:liu-150976DiVA, id: diva2:1246251
Available from: 2018-09-07 Created: 2018-09-07 Last updated: 2018-10-02Bibliographically approved

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Jokubavicius, ValdasSun, Jianwu W.Syväjärvi, Mikael

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  • apa
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