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Silicon Carbide Surface Cleaning and Etching
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2018 (English)In: Advancing Silicon Carbide Electronics Technology I / [ed] Konstantinos Zekentes and Konstantin Vasilevskiy, Materials Research Forum LLC , 2018, p. 1-26Chapter in book (Refereed)
Abstract [en]

Silicon carbide (SiC) surface cleaning and etching (wet, electrochemical, thermal) are important technological processes in preparation of SiC wafers for crystal growth, defect analysis or device processing. While removal of organic, particulate and metallic contaminants by chemical cleaning is a routine process in research and industrial production, the etching which, in addition to structural defects analysis, can also be used to modify wafer surface structure, is very interesting for development of innovative device concepts. In this book chapter we review SiC chemical cleaning and etching procedures and present perspectives of SiC etching for new device development.

Place, publisher, year, edition, pages
Materials Research Forum LLC , 2018. p. 1-26
Series
Materials Research Foundations, ISSN 2471-8890, E-ISSN 2471-8904 ; 37
Keywords [en]
Silicon Carbide, Chemical Cleaning, Wet Etching, Electrochemical Etching, Porous SiC
Identifiers
URN: urn:nbn:se:liu:diva-151048DOI: 10.21741/9781945291852-1ISBN: 9781945291845 (print)ISBN: 9781945291852 (electronic)OAI: oai:DiVA.org:liu-151048DiVA, id: diva2:1247285
Available from: 2018-09-11 Created: 2018-09-11 Last updated: 2018-09-24Bibliographically approved

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Jokubavicius, ValdasSyväjärvi, MikaelYakimova, Rositsa

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Jokubavicius, ValdasSyväjärvi, MikaelYakimova, Rositsa
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