liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effects of Strong Band-Tail States on Exciton Recombination Dynamics in Dilute Nitride GaP/GaNP Core/Shell Nanowires
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-6405-9509
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-7155-7103
2018 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 122, no 33, p. 19212-19218Article in journal (Refereed) Published
Abstract [en]

Exciton dynamics in dilute nitride GaP/GaNP core/shell nanowires (NWs) with pronounced band-tail states formed by nitrogen clusters is investigated using time-resolved photoluminescence (PL) spectroscopy. The emission of excitons localized at the N-related states in the GaNP shell is found to exhibit a stretched exponential decay, with the 1/e lifetime dramatically shortened with decreasing excitation wavelength and reduced shell thickness. The observed PL transient behavior is explained by markedly different exciton lifetimes between the surface and bulk regions of the GaNP shell, that is, similar to 20 ps versus similar to 10 ns, respectively. Despite being trapped at the deep localized N states, the photoexcited excitons are concluded to suffer from pronounced surface recombination via tunneling to the surface states within a distance of 10 nm from the surface, which results in the depth-dependent PL dynamics. The surface recombination rate is, however, lower than that previously reported for GaP, indicative of partial passivation of the surface states by nitrogen. From temperature-dependent PL measurements, characteristic thermal activation energies for the surface and bulk-related nonradiative recombination channels are deduced. The obtained results provide insight into the exciton/carrier dynamics in NW systems with strong localization or alloy disorder, which is important for future nanophotonic and photovoltaic applications of such structures.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2018. Vol. 122, no 33, p. 19212-19218
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-151203DOI: 10.1021/acs.jpcc.8b05199ISI: 000442960300049OAI: oai:DiVA.org:liu-151203DiVA, id: diva2:1248039
Note

Funding Agencies|Swedish Energy Agency [P40119-1]; Swedish Research Council [2015-05532]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]

Available from: 2018-09-13 Created: 2018-09-13 Last updated: 2018-09-13

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Search in DiVA

By author/editor
Chen, ShulaChen, WeiminBuyanova, Irina
By organisation
Surface Physics and ChemistryFaculty of Science & Engineering
In the same journal
The Journal of Physical Chemistry C
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 6 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf