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N-induced Quantum Dots in GaAs/Ga(N, As) Core/Shell Nanowires: Symmetry, Strain, and Electronic Structure
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-5751-6225
Ehime Univ, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-6405-9509
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0001-7155-7103
2018 (English)In: Physical Review Applied, E-ISSN 2331-7019, Vol. 10, no 4, article id 044040Article in journal (Refereed) Published
Abstract [en]

Nanowires (NWs) with embedded zero-dimensional (0D) quantum dots (QDs) have interesting fundamental properties attractive for a variety of applications. The properties of such embedded QDs can be controlled by 0D quantum confinement and also via strain engineering in axial or radial heterostructures of the nanowire system. We evaluate the electronic structure of QDs, which are formed in the Ga(N, As) shell of the GaAs/Ga(N, As) core-shell NWs due to alloy fluctuations. It is found that the principal quantization axis of the studied QDs is primarily oriented along the NW axis, based on the performed polarizationresolved magneto-photoluminescence measurements. We also show that the QDs exhibit a large spectrally dependent variation of the valence band character, which changes from pure heavy-hole states for the low-energy QD emitters to the mixed light-hole heavy-hole states for the QDs emitting at high energies. We ascribe these changes to combined effects of the uniaxial strain caused by the lattice mismatch between the GaAs core and the Ga(N, As) shell, and the local strain/lattice distortion within the short-range fluctuations in the N content. The obtained results underline the importance of the local strain for valence band engineering in hybrid NW structures with embedded QDs.

Place, publisher, year, edition, pages
AMER PHYSICAL SOC , 2018. Vol. 10, no 4, article id 044040
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-152377DOI: 10.1103/PhysRevApplied.10.044040ISI: 000447468900002OAI: oai:DiVA.org:liu-152377DiVA, id: diva2:1259526
Note

Funding Agencies|Swedish Energy Agency [P40119-1]; Swedish Research Council [2015-05532]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; KAKENHI from the Japan Society for the Promotion of Science [16H05970, 23686004]; Kato Foundation for Promotion of Science; Kurata Memorial Hitachi Science and Technology Foundation; Murata Science Foundation

Available from: 2018-10-30 Created: 2018-10-30 Last updated: 2019-03-07

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