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Atomic layer deposition of InN using trimethylindium and ammonia plasma
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-1000-0437
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-7171-5383
2019 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, no 2, article id 020926Article in journal (Refereed) Published
Abstract [en]

Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, the authors hypothesize that a time-resolved, surface-controlled CVD route could offer a way forward for InN thin film deposition. In this work, the authors report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si(100). They found a narrow atomic layer deposition window of 240-260 degrees C with a deposition rate of 0.36 A/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray diffraction measurements further confirmed the polycrystalline nature of InN thin films. X-ray photoelectron spectroscopy measurements show nearly stoichiometric InN with low carbon level (amp;lt;1 at. %) and oxygen level (amp;lt;5 at. %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH3 plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge. Published by the AVS.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2019. Vol. 37, no 2, article id 020926
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-155541DOI: 10.1116/1.5079279ISI: 000460437200030OAI: oai:DiVA.org:liu-155541DiVA, id: diva2:1299398
Note

Funding Agencies|Swedish Foundation for Strategic Research through the project "Time-resolved low temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg foundation through the project "Bridging the THz gap" [KAW 2013.0049]; VR [VR 2016-05362]; Carl Trygger Foundation

Available from: 2019-03-26 Created: 2019-03-26 Last updated: 2019-04-18

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Deminskyi, PetroRouf, PollaIvanov, Ivan GueorguievPedersen, Henrik

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Inorganic Chemistry

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