liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Understanding the effect of N2200 on performance of J71: ITIC bulk heterojunction in ternary non-fullerene solar cells
East China Normal Univ, Peoples R China.
East China Normal Univ, Peoples R China.
Soochow Univ, Peoples R China.
Shanghai Jiao Tong Univ, Peoples R China.
Show others and affiliations
2019 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 71, p. 65-71Article in journal (Refereed) Published
Abstract [en]

None-fullerene solar cells with ternary architecture have attracted much attention because it is an effective approach for boosting the device power conversion efficiency. Here, the crystalline polymer N2200 as the third component is integrated into J71: ITIC bulk heterojunction. A series of characterizations indicate that N2200 could increase photo-harvesting, balanced hole and electron mobilities, enhanced exciton dissociation, and suppressed charge recombination, which result in the comprehensive improvement of open circuit voltage, short circuit current and fill factor in the device. Moreover, after introduction of N2200, the morphology of the ternary active layer is optimized, and the film crystallinity is improved. This work demonstrates that adding a small quantity of high crystallization acceptor into non-fullerene donor: acceptor mixture is a promising strategy toward developing high-performance organic solar cells.

Place, publisher, year, edition, pages
Elsevier, 2019. Vol. 71, p. 65-71
Keywords [en]
None-fullerene; Interface; Charge recombination; Efficiency; Ternary organic solar cells
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-158534DOI: 10.1016/j.orgel.2019.05.004ISI: 000469838800010Scopus ID: 2-s2.0-85065828560OAI: oai:DiVA.org:liu-158534DiVA, id: diva2:1334930
Note

Funding Agencies|National Science Foundation of China [11604099, 21875067, 51873138, 51811530011]; Shanghai Rising -Star [19QA1403100]; Shanghai Science and Technology Innovation Action Plan [17JC1402500]; National Key Project for Basic Research of China [2017YFA0303403]; Swedish Research Council [2016-05498]; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; STINT grant [CH2017-7163]

Available from: 2019-07-03 Created: 2019-07-03 Last updated: 2019-10-16Bibliographically approved

Open Access in DiVA

The full text will be freely available from 2021-05-08 08:41
Available from 2021-05-08 08:41

Other links

Publisher's full textScopus

Authority records BETA

Fahlman, Mats

Search in DiVA

By author/editor
Fahlman, MatsBao, Qinye
By organisation
Surface Physics and ChemistryFaculty of Science & Engineering
In the same journal
Organic electronics
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 48 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf