liu.seSök publikationer i DiVA
Ändra sökning
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking
KIST, South Korea.
KIST, South Korea.
KIST, South Korea.
KIST, South Korea.
Visa övriga samt affilieringar
2019 (Engelska)Ingår i: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 11, nr 28, s. 25358-25368Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.

Ort, förlag, år, upplaga, sidor
AMER CHEMICAL SOC , 2019. Vol. 11, nr 28, s. 25358-25368
Nyckelord [en]
organic ferroelectric memory; organic field-effect transistor; bis-FB-N-3; inverter; switchable functions
Nationell ämneskategori
Den kondenserade materiens fysik
Identifikatorer
URN: urn:nbn:se:liu:diva-159246DOI: 10.1021/acsami.9b07462ISI: 000476684900056PubMedID: 31264831OAI: oai:DiVA.org:liu-159246DiVA, id: diva2:1341274
Anmärkning

Funding Agencies|Korea Institute of Science and Technology (KIST); National Research Foundation of Korea [NRF-2016R1C1B2007330]; Ministry of Trade, Industry, and Energy (MOTIE, Korea) under the Industrial Technology Innovation Program "Development of 3D-Deformable Multilayered FPCB Devices" [10051162]

Tillgänglig från: 2019-08-08 Skapad: 2019-08-08 Senast uppdaterad: 2019-08-08

Open Access i DiVA

Fulltext saknas i DiVA

Övriga länkar

Förlagets fulltextPubMed

Sök vidare i DiVA

Av författaren/redaktören
Fabiano, SimoneBerggren, Magnus
Av organisationen
Fysik och elektroteknikTekniska fakultetenLaboratoriet för organisk elektronik
I samma tidskrift
ACS Applied Materials and Interfaces
Den kondenserade materiens fysik

Sök vidare utanför DiVA

GoogleGoogle Scholar

doi
pubmed
urn-nbn

Altmetricpoäng

doi
pubmed
urn-nbn
Totalt: 337 träffar
RefereraExporteraLänk till posten
Permanent länk

Direktlänk
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annat format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annat språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf