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Nucleation and Growth of Eutectic Si in Al-Si Alloys with Na Addition
Institute of Casting Research, Leoben, Austria.
Department of Materials Science, Saarland University, Saarbrücken, Germany.
Department of Materials Science, Saarland University, Saarbrücken, Germany.
Department of Materials Science, Saarland University, Saarbrücken, Germany.
Vise andre og tillknytning
2015 (engelsk)Inngår i: Metallurgical and Materials Transactions. A, ISSN 1073-5623, E-ISSN 1543-1940, Vol. 46, nr 3, s. 1300-1311Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Al-5 wt pct Si-based alloys with Na additions (19 and 160 ppm) have been produced by controlled sand casting and melt spinning. Entrained droplet technique and differential scanning calorimetry were employed to investigate the nucleation behavior of eutectic Si. High-resolution transmission electron microscopy and atom probe tomography were used to investigate the distribution of Na atoms within eutectic Si and at the interfaces between eutectic Si and eutectic Al. It was found that (i) only 19 ppm Na addition results into a high undercooling (49 K (49 °C)) of the entrained eutectic droplet. However, further increasing Na addition up to 160 ppm exerts no positive effect on the nucleation of eutectic Si, instead a decreased undercooling (29 K (29 °C)) was observed. (ii) Na addition suppresses the growth of eutectic Si due to the Na segregation at the interface between eutectic Si and eutectic Al, and (iii) Na addition promotes significant multiple Si twins, which can be attributed to the proposed adsorption of Na atoms at the intersection of Si twins and along the 〈112〉Si growth direction of Si. The present investigation demonstrates, for the first time, a direct observation on the distribution of Na atoms within eutectic Si and thereby provides strong experimental supports to the well-accepted impurity-induced twinning growth mechanism and poisoning of the twin plane re-entrant edge growth mechanism.

sted, utgiver, år, opplag, sider
2015. Vol. 46, nr 3, s. 1300-1311
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-160234DOI: 10.1007/s11661-014-2702-6OAI: oai:DiVA.org:liu-160234DiVA, id: diva2:1350759
Tilgjengelig fra: 2019-09-12 Laget: 2019-09-12 Sist oppdatert: 2019-09-13
Inngår i avhandling
1. Eutectic Modification of Al-Si casting alloys
Åpne denne publikasjonen i ny fane eller vindu >>Eutectic Modification of Al-Si casting alloys
2019 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

Aluminum alloys with silicon as the major alloying element are the most widely used aluminum casting alloys. The eutectic phase in these alloys is formed by hard and brittle silicon plates in an aluminum matrix. Such silicon plates can act as crack propagation paths deteriorating the toughness of the material. To enhance ductility, silicon can be modified to a coral-like microstructure by addition of a modifying agent. Amongst the elements proposed as modifiers, only strontium, sodium and europium induce a plate-tocoral transition, while others such as ytterbium, only refine the silicon plates. The exact mechanism for the remarkable plate-to-coral change, and the reason why certain elements only refine the structure, is still not completely understood.

In this investigation, atom probe tomography and transmission electron microscopy were used to analyze and compare the crystal structure and the distribution of solute atoms in silicon at the atomic level. An unmodified alloy and alloys modified by strontium, sodium, europium and ytterbium were studied. Elements inducing silicon plate-to-coral transition were found to contain nanometer sized clusters at the defects in silicon with stoichiometries corresponding to compounds formed at the ternary eutectic reaction of each system. In contrast, the addition of ytterbium, that only refines the silicon plates, is unable to form clusters in silicon. We propose that the formation of ternary compound clusters AlSiNa, Al2Si2Sr and Al2Si2Eu at the silicon / liquid interface during solidification restrict silicon growth. The formation of clusters on silicon facets create growth steps and increase growth direction diversity. The incorporation of clusters in silicon explains the high density of crystallographic defects and the structural modification from plates to corals.

The parallel lattice plane-normals 011Si // 0001Al2Si2Eu, 011Si // 610Al2Si2Eu and 111Si // 610Al2Si2Eu were found between Al2Si2Eu and silicon, and absent between Al2Si2Yb and silicon. We propose a favorable heterogeneous formation of Al2Si2Eu on silicon. The misfit between 011Si and 0002Al2Si2X interplanar spacings shows a consistent trend with the potency of modification for several elements such as strontium, sodium, europium, calcium, barium, ytterbium and yttrium.

sted, utgiver, år, opplag, sider
Linköping: Linköping University Electronic Press, 2019. s. 82
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 2014
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-160235 (URN)10.3384/diss.diva-160235 (DOI)9789175190075 (ISBN)
Disputas
2019-10-31, Mott, F Building, Campus Valla, Linköping, 14:00 (engelsk)
Opponent
Veileder
Tilgjengelig fra: 2019-09-13 Laget: 2019-09-13 Sist oppdatert: 2019-12-12bibliografisk kontrollert

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