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Band structure of wurtzite GaBiAs nanowires
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering. Chinese Academy of Sciences, Shanghai, China. (Functional electronic materials)
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Faculty of Science & Engineering. Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. (Functional Electronic Materials)
Linköping University, Department of Physics, Chemistry and Biology, Surface Physics and Chemistry. Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering. (Functional Electronic Materials)ORCID iD: 0000-0001-7640-8086
Chinese Academy of Sciences, Shanghai, China.
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2019 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 19, p. 6454-6460Article in journal (Refereed) Published
Abstract [en]

We report on the first successful growth of wurtzite (WZ) GaBiAs nanowires (NWs) and reveal the effects of Bi incorporation on the electronic band structure by using polarization-resolved optical spectroscopies performed on individual NWs. Experimental evidence of a decrease in the band-gap energy and an upward shift of the topmost three valence subbands upon the incorporation of Bi atoms is provided, whereas the symmetry and ordering of the valence band states remain unchanged, that is, Γ9, Γ7, and Γ7 within the current range of Bi compositions. The extraordinary valence band structure of WZ GaBiAs NWs is explained by anisotropic hybridization and anticrossing between p-like Bi states and the extended valence band states of host WZ GaAs. Moreover, the incorporation of Bi into GaAs is found to significantly reduce the temperature sensitivity of the band-gap energy in WZ GaBiAs NWs. Our work therefore demonstrates that utilizing dilute bismide alloys provides new avenues for band-gap engineering and thus photonic engineering with NWs.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2019. Vol. 19, p. 6454-6460
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-160735DOI: 10.1021/acs.nanolett.9b02679ISI: 000486361900080Scopus ID: 2-s2.0-85072133061OAI: oai:DiVA.org:liu-160735DiVA, id: diva2:1357889
Note

Funding agencies: Linkoping University; Swedish Research CouncilSwedish Research Council [2016-05091]; Swedish Energy AgencySwedish Energy Agency [P40119-1]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [20

Available from: 2019-10-04 Created: 2019-10-04 Last updated: 2019-11-06Bibliographically approved

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The full text will be freely available from 2020-08-19 15:11
Available from 2020-08-19 15:11

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Huang, YuqingStehr, Jan EricChen, WeiminBuyanova, Irina A

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Zhang, BinHuang, YuqingStehr, Jan EricChen, WeiminBuyanova, Irina A
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Plasma and Coating PhysicsFaculty of Science & EngineeringSurface Physics and ChemistryBiomolecular and Organic Electronics
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