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Development of an all-SiC neuronal interface device
University of South Florida, Tampa, FL, U.S.A..
University of Texas at Dallas, Dallas, TX, U.S.A.
University of South Florida, Tampa, FL, U.S.A..
University of South Florida, Tampa, FL, U.S.A..
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2016 (English)In: MRS Advances, ISSN 2059-8521, Vol. 1, no 55, p. 3679-3684Article in journal (Refereed) Published
Abstract [en]

The intracortical neural interface (INI) is a key component of brain machine interfaces (BMI) which offer the possibility to restore functions lost by patients due to severe trauma to the central or peripheral nervous system. Unfortunately today’s neural electrodes suffer from a variety of design flaws, mainly the use of non-biocompatible materials based on Si or W with polymer coatings to mask the underlying material. Silicon carbide (SiC) is a semiconductor that has been proven to be highly biocompatible, and this chemically inert, physically robust material system may provide the longevity and reliability needed for the INI community. The design, fabrication, and preliminary testing of a prototype all-SiC planar microelectrode array based on 4H-SiC with an amorphous silicon carbide (a-SiC) insulator is described. The fabrication of the planar microelectrode was performed utilizing a series of conventional micromachining steps. Preliminary data is presented which shows a proof of concept for an all-SiC microelectrode device.

Place, publisher, year, edition, pages
Cambridge University Press, 2016. Vol. 1, no 55, p. 3679-3684
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-160908DOI: 10.1557/adv.2016.360ISI: 000412692300004Scopus ID: 2-s2.0-85029850488OAI: oai:DiVA.org:liu-160908DiVA, id: diva2:1360890
Available from: 2019-10-14 Created: 2019-10-14 Last updated: 2019-10-21Bibliographically approved

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Ul Hassan, JawadJanzén, Erik

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