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Silicon Carbide Microstrip Radiation Detectors
Linköping University, Department of Physics, Chemistry and Biology, Sensor and Actuator Systems. Linköping University, Faculty of Science & Engineering. Politecnico di Milano, Campus Como, Como, Italy.
Politecnico di Milano, Como Campus, Italy; Italian National Institute of Nuclear Physics (INFN), Section Milano, Milan, Italy.
2019 (English)In: Micromachines, E-ISSN 2072-666X, Vol. 10, no 12, article id 835Article in journal (Refereed) Published
Abstract [en]

Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at room temperature, with high performance, and without the use of any bulky and expensive cooling equipment. In this work, we investigated the electrical and spectroscopic performance of an innovative position-sensitive semiconductor radiation detector in epitaxial 4H-SiC. The full depletion of the epitaxial layer (124 µm, 5.2 × 1013 cm−3) was reached by biasing the detector up to 600 V. For comparison, two different microstrip detectors were fully characterized from −20 °C to +107 °C. The obtained results show that our prototype detector is suitable for high resolution X-ray spectroscopy with imaging capability in a wide range of operating temperatures.

Place, publisher, year, edition, pages
MDPI, 2019. Vol. 10, no 12, article id 835
Keywords [en]
silicon carbide; semiconductor radiation detector; microstrip detector
National Category
Engineering and Technology Accelerator Physics and Instrumentation
Identifiers
URN: urn:nbn:se:liu:diva-162431DOI: 10.3390/mi10120835ISI: 000507337900023PubMedID: 31801210OAI: oai:DiVA.org:liu-162431DiVA, id: diva2:1374694
Note

Funding agencies: Italian National Institute of Nuclear Physics (INFN)Istituto Nazionale di Fisica Nucleare; Italian Space Agency (ASI) - Linkoping University

Available from: 2019-12-02 Created: 2019-12-02 Last updated: 2024-01-17Bibliographically approved

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Puglisi, Donatella

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