liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Scalable Electronic Ratchet with Over 10% Rectification Efficiency
Linköping University, Department of Physics, Chemistry and Biology, Complex Materials and Devices. Linköping University, Faculty of Science & Engineering.
Holst Ctr TNO, Netherlands.
Holst Ctr TNO, Netherlands; Eindhoven Univ Technol, Netherlands.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-7104-7127
2020 (English)In: ADVANCED SCIENCE, ISSN 2198-3844, article id 1902428Article in journal (Refereed) Epub ahead of print
Abstract [en]

Electronic ratchets use a periodic potential with broken inversion symmetry to rectify undirected (electromagnetic, EM) forces and can in principle be a complement to conventional diode-based designs. Unfortunately, ratchet devices reported to date have low or undetermined power conversion efficiencies, hampering applicability. Combining experiments and numerical modeling, field-effect transistor-based ratchets are investigated in which the driving signal is coupled into the accumulation layer via interdigitated finger electrodes that are capacitively coupled to the field effect transistor channel region. The output current-voltage curves of these ratchets can have a fill factor amp;gt;amp;gt; 0.25 which is highly favorable for the power output. Experimentally, a maximum power conversion efficiency well over 10% at 5 MHz, which is the highest reported value for an electronic ratchet, is determined. Device simulations indicate this number can be increased further by increasing the device asymmetry. A scaling analysis shows that the frequency range of optimal performance can be scaled to the THz regime, and possibly beyond, while adhering to technologically realistic parameters. Concomitantly, the power output density increases from approximate to 4 W m(-2) to approximate to 1 MW m(-2). Hence, this type of ratchet device can rectify high-frequency EM fields at reasonable efficiencies, potentially paving the way for actual use as energy harvester.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2020. article id 1902428
Keywords [en]
field effect transistors; indium-gallium-zinc oxide (IGZO); modeling; ratchets; rectification
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-162941DOI: 10.1002/advs.201902428ISI: 000502334500001Scopus ID: 2-s2.0-85076346103OAI: oai:DiVA.org:liu-162941DiVA, id: diva2:1382364
Note

Funding Agencies|Knut and Alice Wallenberg Foundation, project "Tail of the Sun"

Available from: 2020-01-02 Created: 2020-01-02 Last updated: 2020-01-22Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Andersson, Olof

Search in DiVA

By author/editor
Andersson, OlofKemerink, Martijn
By organisation
Complex Materials and DevicesFaculty of Science & EngineeringBiomolecular and Organic Electronics
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 69 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf