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Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Inst Italiano Tecnol, Italy.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-7626-1181
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2020 (English)In: APL Materials, E-ISSN 2166-532X, Vol. 8, no 1, article id 011104Article in journal (Refereed) Published
Abstract [en]

We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sublimation on C-face 4H-SiC. The mid-infrared optical Hall effect technique is used to determine the magnetic field dependence of the inter-Landau level transition energies and their optical polarization selection rules, which unambiguously show that the multilayer graphene consists of electronically decoupled layers. Transmission electron microscopy reveals no out-of-plane rotational disorder between layers in the stack, which is in contrast to what is typically observed for C-face graphene grown by low temperature sublimation. It is found that the multilayer graphene maintains AB-stacking order with increased interlayer spacing by 2.4%-8.4% as compared to highly oriented pyrolytic graphite. Electron energy loss spectroscopy mapping reveals Si atoms trapped in between layers, which are proposed to be the cause for the observed increased interlayer spacing leading to layer decoupling. Based on our results, we propose a defect-driven growth evolution mechanism for multilayer graphene on C-face SiC via high temperature sublimation.

Place, publisher, year, edition, pages
AMER INST PHYSICS , 2020. Vol. 8, no 1, article id 011104
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-164692DOI: 10.1063/1.5134862ISI: 000517523600001OAI: oai:DiVA.org:liu-164692DiVA, id: diva2:1417540
Note

Funding Agencies|Swedish Research Council VRSwedish Research Council [2016-00889]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [FL12-0181, RIF 14-0074, RIF14-055]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO Mat LiU 2009-00971]

Available from: 2020-03-29 Created: 2020-03-29 Last updated: 2023-12-28

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Persson, IngemarArmakavicius, NerijusBouhafs, ChamseddineStanishev, ValleryKuhne, PhilippHofmann, TinoSchubert, MathiasRosén, JohannaYakimova, RositsaPersson, Per O ADarakchieva, Vanya
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