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Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden.
United Monolith Semicond GmbH, Germany.
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2022 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 37, no 3, article id 035011Article in journal (Refereed) Published
Abstract [en]

The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

Place, publisher, year, edition, pages
IOP Publishing Ltd , 2022. Vol. 37, no 3, article id 035011
Keywords [en]
GaN HEMTs; microwave; LPCVD; NH3 pretreatment; traps
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-182761DOI: 10.1088/1361-6641/ac4b17ISI: 000746691200001OAI: oai:DiVA.org:liu-182761DiVA, id: diva2:1636283
Note

Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA)Vinnova [2016-05190]; Linkoping University; Chalmers University; ABB; Epiluvac; EricssonEricsson; FMV; Gotmic; ON Semiconductor; Saab AB; SweGaN; United Monolithic Semiconductors (UMS); VINNOVAVinnova [2017-04870]; Swedish Research Council VRSwedish Research Council [2016-00889]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0024, STP19-0008]; European Unions Horizon 2020 research and innovation program [823260]; Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation

Available from: 2022-02-09 Created: 2022-02-09 Last updated: 2023-12-28

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