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Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry: The magnetic response of the nitrogen defect in 4H-SiC
Univ Nebraska, NE 68588 USA.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Lund Univ, Sweden.ORCID iD: 0000-0001-7344-1518
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
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2022 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 120, no 10, article id 102101Article in journal (Refereed) Published
Abstract [en]

We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of field and frequency dependencies of magnetic response due to spin transitions associated with nitrogen defects in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal (h) and cubic (k) coordinated nitrogen including coupling with its nuclear spin (I = 1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements, we can fully determine polarization properties of the spin transitions, and we can obtain the k coordinated nitrogen g and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator line shape functions. Magnetic-field line broadening presently obscures access to h parameters. We show that measurements of THz-EPR-GSE at positive and negative fields differ fundamentally and hence provide additional information. We propose frequency-scanning THz-EPR-GSE as a versatile method to study properties of spins in solid state materials.

Place, publisher, year, edition, pages
AIP Publishing , 2022. Vol. 120, no 10, article id 102101
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-183879DOI: 10.1063/5.0082353ISI: 000767648900006OAI: oai:DiVA.org:liu-183879DiVA, id: diva2:1648426
Note

Funding Agencies|National Science FoundationNational Science Foundation (NSF) [DMR 1808715, OIA-2044049]; Air Force Office of Scientific ResearchUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA9550-18-1-0360, FA9550-19-S-0003, FA9550-21-1-0259]; University of Nebraska Foundation; J. A. Woollam Foundation; Swedish Research Council VRSwedish Research Council [2016-00889]; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [RIF14-055, EM16-0024]; Swedish Governmental Agency for Innovation Systems VINNOVA under the Competence Center Program [2016-05190]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Faculty Grant SFO Mat LiU [2009-00971]; Knut and Alice Wallenbergs Foundation funded grant Wide-bandgap semiconductors for next generation quantum components [2018.0071]; ERC under the EU [714850]

Available from: 2022-03-30 Created: 2022-03-30 Last updated: 2023-12-28

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Knight, Sean RobertRichter, SteffenKuhne, PhilippStanishev, ValleryDarakchieva, Vanya
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