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Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0003-1785-0864
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Vise andre og tillknytning
2007 (engelsk)Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 515, nr 7-8, s. 3434-3438Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Ta thin films were grown on Si substrates at different inclination angles with respect to the sputter source using high power impulse magnetron sputtering (HIPIMS), an ionized physical vapor deposition technique. The ionization allowed for better control of the energy and directionality of the sputtered species, and consequently for improved properties of the deposited films. Depositions were made on Si substrates with the native oxide intact. The structure of the as deposited films was investigated using X-ray diffraction, while a four-point probe setup was used to measure the resistivity. A substrate bias process-window for growth of bcc-Ta was observed. However, the process-window position changed with changing inclination angles of the substrate. The formation of this low-resistivity bcc-phase could be understood in light of the high ion flux from the HIPIMS discharge.

sted, utgiver, år, opplag, sider
Elsevier , 2007. Vol. 515, nr 7-8, s. 3434-3438
Emneord [en]
HPPMS, Ionized PVD, IPVD, Pulsed sputtering
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-10442DOI: 10.1016/j.tsf.2006.10.013OAI: oai:DiVA.org:liu-10442DiVA, id: diva2:17181
Merknad
Original publication: J. Alamia, P. Eklunda, J.M. Anderssona, M. Lattemanna, E. Wallina, J. Bohlmarka, P. Perssona, and U. Helmersson, Phase tailoring of Ta thin films by highly ionized pulsed magnetron sputtering, 2007, Thin Solid Films, (515), 7-8, 3434-3438. http://dx.doi.org/10.1016/j.tsf.2006.10.013. Copyright: Elsevier B.V., http://www.elsevier.com/Tilgjengelig fra: 2007-12-14 Laget: 2007-12-14 Sist oppdatert: 2017-12-14bibliografisk kontrollert
Inngår i avhandling
1. Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
Åpne denne publikasjonen i ny fane eller vindu >>Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
2005 (engelsk)Doktoravhandling, med artikler (Annet vitenskapelig)
Abstract [en]

The present thesis addresses two research areas related to film growth in a highly ionized magnetron sputtering system: plasma characterization, and thin film growth and analysis. The deposition technique used is called high power pulsed magnetron sputtering (HPPMS). Characteristic for this technique are high energy pulses (a few Joules) of length 50-100 µs that are applied to the target (cathode) with a duty time of less than 1 % of the total pulse time. This results in a high electron density in the discharge (>1x1019 m-3) and leads to an increase of the ionization fraction of the sputtered material reaching up to 70 % for Cu.

In this work the spatial and temporal evolution of the plasma parameters, including the electron energy distribution function (EEDF), the electron density and the electron temperature are determined using electrostatic Langmuir probes. Electron temperature measurements reveal a low effective temperature of 2-3 eV. The degree of ionization in the HPPMS discharge is explained in light of the self-sputtering yield of the target material. A simple model is therefore provided in order to compare the sputtering yield in HPPMS and that in dc magnetron sputtering (dcMS) for the same average power.

Thin Ta films are grown using HPPMS and dcMS and their properties are studied. It is shown that enhanced microstructure and morphology of the deposited films is achieved by HPPMS. The Ta films are also deposited at a number of substrate inclination angles ranging from 0o (i.e., facing the target surface) up to 180 o (i.e., facing away from the target). Deposition rate measurements performed at all inclination angles for both techniques, reveal that growth made using HPPMS resulted in an improved film thickness at higher inclination. Furthermore, the high ionization of the Ta atoms in HPPMS discharge is found to allow for phase tailoring of the deposited films at all inclination angles by applying a bias voltage to the substrate. Finally, highly ionized magnetron sputtering of a compound MAX-phase material (Ti3SiC2) is performed, demonstrating that the HPPMS discharge could also be used to tailor the composition of the growing Ti-Si-C films.

sted, utgiver, år, opplag, sider
Institutionen för fysik, kemi och biologi, 2005
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 948
Emneord
Highly ionized pulsed magnetron sputtering, HPPMS, HPPIMS, thin film, plasma analysis, Langmuir probe
HSV kategori
Identifikatorer
urn:nbn:se:liu:diva-4147 (URN)91-85299-40-5 (ISBN)
Disputas
2005-06-03, 10:15 (engelsk)
Opponent
Veileder
Merknad

On the day of the public defence of the doctoral thesis, the status of articles III and IV was Submitted. The titles of papers VI and VII changed between their manuscript forms and when they were published.

Tilgjengelig fra: 2005-10-25 Laget: 2005-10-25 Sist oppdatert: 2020-04-01

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