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Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén)
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén)ORCID iD: 0000-0003-4902-5383
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2023 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 23, no 2, p. 1049-1056Article in journal (Refereed) Published
Abstract [en]

Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is difficult to achieve as a result of unintentional polarity inversion domains (IDs). Herein, we present a comprehensive structural investigation with both atomic detail and thermodynamic analysis of the polarity evolution in low-and high-temperature AlN layers on on-axis and 4 degrees off-axis carbon-face 4H-SiC (000 (1) over bar) grown by hot-wall metal organic chemical vapor deposition. A polarity control strategy has been developed by variation of thermodynamic Al supersaturation and substrate misorientation angle in order to achieve the desired growth mode and polarity. We demonstrate that IDs are completely suppressed for high-temperature AlN nucleation layers when a step-flow growth mode is achieved on the off-axis substrates. We employ this approach to demonstrate high quality N-polar epitaxial AlGaN/GaN/AlN heterostructures.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2023. Vol. 23, no 2, p. 1049-1056
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-191983DOI: 10.1021/acs.cgd.2c01199ISI: 000923282200001OAI: oai:DiVA.org:liu-191983DiVA, id: diva2:1740154
Note

Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA) [2022-03139]; Lund University; Linkoeping University; Chalmers University of Technology; Ericsson; Epiluvac; FMV; Gotmic; Hexagem; Hitachi Energy; On Semiconductor; Region Skane; Saab; SweGaN; UMS; Volvo Cars; Swedish Research Council VR [2016-00889, 2022-04812]; Swedish Foundation for Strategic Research [RIF14-055, EM16-0024]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoeping University, Faculty Grant SFO Mat LiU [2009-00971]

Available from: 2023-02-28 Created: 2023-02-28 Last updated: 2023-12-28

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Paskov, Plamen P.

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