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Carbon ion self-sputtering attained by sublimation of hot graphite target and controlled by pulse injection of a neon-helium gas mixture
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Warsaw Univ Technol, Poland.ORCID-id: 0000-0001-7104-3196
Warsaw Univ Technol, Poland.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-4898-5115
Polish Acad Sci, Poland.
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2023 (Engelska)Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 620, artikel-id 156708Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The operation of graphite targets with an increased temperature (HT - hot target) is studied for the case of gas injection magnetron sputtering (GIMS) of: 1) diamond-like carbon (DLC), and 2) carbon-silicon carbide (C-SiC) films. A purposely-thinned graphite target with a reduced thermal conductivity is applied for DLC deposition, extending its high temperature sputtering range up to 1636 degrees C. For the purpose of C-SiC synthesis four sockets with a silicon carbide powder are designed within graphite target. In this approach, the C-SiC target surface can be heated up to 1443 degrees C due to a greater energy input from impulse plasma, in the range 322-932 J. The HT sputtering is energy-controlled by a pulsed injection of a neon-helium gas mixture. High-energy Ne+ and He+ ions extend the length of pulsed GIMS discharge due to the self-sputtering effect observed during the deposition of DLC and C-SiC films. These conditions result in an almost 5-fold increase in the film growth rate (up to 185 nm/min) with respect to the operation with a cold target, which is due to the assisting vapour sublimation from custom-designed graphite-based targets. The temperature boosted HT GIMS discharge, proves to be an efficient tool for reaching relatively high (similar to 35 %) sp(3)-hybridized C content in both carbon-based materials. It also allows for tailoring the energy bandgap of DLC-based optical structure, in the range from 1.7 to 2.75 eV, due to the formation of the (C-C) and (C-O) bonds. Higher content of silicon oxide (SiO2-x) and silicon carbide (SiC) phases (15 - 23 %) in the case of C-SiC films results in hardness increase from 21.8 to 30.1 GPa.

Ort, förlag, år, upplaga, sidor
ELSEVIER , 2023. Vol. 620, artikel-id 156708
Nyckelord [en]
Hot graphite cathode; Self-sputtering action; Gas injection magnetron sputtering; Diamond-like carbon (DLC); Carbon-silicon carbide (C-SiC); Hardness results
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Materialkemi
Identifikatorer
URN: urn:nbn:se:liu:diva-192943DOI: 10.1016/j.apsusc.2023.156708ISI: 000949690200001OAI: oai:DiVA.org:liu-192943DiVA, id: diva2:1749845
Anmärkning

Funding Agencies|National Science Centre of Poland [2018/31/B/ST8/00635]; National Science Centre of Poland under PRELUDIUM project [2017/27/N/ST8/00454]; Warsaw University of Technology within the Excellence Initiative: Research University [1820/151/Z09/2021]; Swedish Research Council VR [2018-03957]; Swedish Energy Agency [51201-1]

Tillgänglig från: 2023-04-11 Skapad: 2023-04-11 Senast uppdaterad: 2023-07-04

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Wicher, BartoszGreczynski, GrzegorzPshyk, Oleksandr
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