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High-quality N-polar GaN optimization by multi-step temperature growth process
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. SweGaN AB, Olaus Magnus vag, S-58330 Linkoping, Sweden. (C3NiT-Janzén)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén)ORCID iD: 0000-0003-4902-5383
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2676-4856
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2023 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 603, article id 127002Article in journal (Refereed) Published
Abstract [en]

We report growth optimization of Nitrogen (N)-polar GaN epitaxial layers by hot-wall metal-organic vapor phase epitaxy on 4H-SiC (0001) with a misorientation angle of 4 degrees towards the [1120] direction. We find that when using a 2-step temperature process for the N-polar GaN growth, step bunching is persistent for a wide range of growth rates (7 nm/min to 49 nm/min) and V/III ratios (251 to 3774). This phenomenon is analyzed in terms of anisotropic step-flow growth and the Ehrlich-Schwoebel barrier, and their effects on the surface step height and step width. The N-polar GaN growth is further optimized by using 3-step and 4-step temperature processes and the layers are compared to those using the 2-step temperature process in terms of surface morphology and defect densities. It is shown that a significantly improved surface morphology with a root mean square of 1.4 nm and with low dislocation densities (screw dislocation density of 2.8 x 108 cm-2 and edge dislocation density of 1.3 x 109 cm-2) can be achieved for 4-step temperature process. The optimized growth conditions allow to overcome the step-bunching problem. The results are further discussed in view of Ga supersaturation and a general growth strategy for high-quality N-polar GaN growth is proposed.

Place, publisher, year, edition, pages
ELSEVIER , 2023. Vol. 603, article id 127002
Keywords [en]
A1; N-polar GaN; A2; epitaxial III-nitride; A3; surface morphology; B1; MOCVD; B2; 2-step temperature process; C1; Ga supersaturation
National Category
Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-194834DOI: 10.1016/j.jcrysgro.2022.127002ISI: 000992241200001OAI: oai:DiVA.org:liu-194834DiVA, id: diva2:1767853
Note

Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA) , Sweden [2016-05190]; Linkoeping University, Sweden; Chalmers University of technology, Sweden; Ericsson, Sweden; Epiluvac, Sweden; FMV, Sweden; Gotmic, Sweden; Hexagem, Sweden; Hitachi Energy, Sweden; On Semiconductor, Saab, Sweden; SweGaN, Sweden; UMS, Volvo Cars, Sweden; Swedish Research Council VR, Sweden [2016-00889]; Swedish Foundation for Strategic Research, Sweden [RIF14-055, EM16-0024]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoeping University, Sweden; Faculty Grant SFO Mat LiU [2009-00971]; NanoLund

Available from: 2023-06-14 Created: 2023-06-14 Last updated: 2023-12-28

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