liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén; TheMAC)ORCID iD: 0000-0002-7626-1181
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén; TheMAC)ORCID iD: 0000-0002-6363-4962
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (C3NiT-Janzén)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Hitachi Energy, Sweden. (C3NiT-Janzén)
Show others and affiliations
2023 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 217, article id 112481Article in journal (Refereed) Published
Abstract [en]

In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm−3) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm−3 and carbon of 2×1016 cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm2/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2023. Vol. 217, article id 112481
Keywords [en]
AlGaN; MOCVD; GaN; Structural properties; Electrical properties
National Category
Corrosion Engineering
Identifiers
URN: urn:nbn:se:liu:diva-197850DOI: 10.1016/j.vacuum.2023.112481ISI: 001060601600001OAI: oai:DiVA.org:liu-197850DiVA, id: diva2:1798092
Note

Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA) [2022-03139]; Lund University; Linkoeping University; Chalmers University of Technology; Hitachi Energy; Ericsson; Epiluvac; FMV; Gotmic; Region Skkne; Saab; SweGaN; Volvo Cars; UMS; Swedish Research Council VR [2016-00889, 2022-04812]; Swedish Foundation for Strategic Research [EM16-0024, STP19-0008]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoeping University [2009-00971]

Available from: 2023-09-18 Created: 2023-09-18 Last updated: 2024-02-12

Open Access in DiVA

fulltext(1901 kB)15 downloads
File information
File name FULLTEXT01.pdfFile size 1901 kBChecksum SHA-512
367dafe40d12448eaca2d3021d40148b1cc144e4efadb24649cd5f0d087380e3d4d043c06879609ab5e851ea4bac51b1e786fa989382f8cb29c59c34ef9ca71d
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Stanishev, ValleryArmakavicius, NerijusGogova-Petrova, DanielaNawaz, MuhammadPaskov, PlamenDarakchieva, Vanya
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Vacuum
Corrosion Engineering

Search outside of DiVA

GoogleGoogle Scholar
Total: 15 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 64 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf