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High-mass metal ion irradiation enables growth of high-entropy sublattice nitride thin films from elemental targets
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Sumy State Univ, Ukraine. (Wallenberg Initiative Materials Science for Sustainability)ORCID iD: 0000-0003-3162-2972
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Medicine and Health Sciences. Empa Swiss Fed Labs Mat Sci & Technol, Switzerland.ORCID iD: 0000-0001-9237-6512
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Warsaw Univ Technol, Poland.ORCID iD: 0000-0001-7104-3196
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-3203-7935
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2023 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 41, no 6, article id 063108Article in journal (Refereed) Published
Abstract [en]

Synthesis of high-entropy sublattice nitride (HESN) coatings by magnetron sputtering is typically done using custom-made alloyed targets with specific elemental compositions. This approach is expensive, requires long delivery times, and offers very limited flexibility to adjust the film composition. Here, we demonstrate a new method to grow HESN films, which relies on elemental targets arranged in the multicathode configuration with substrates rotating during deposition. TiVNbMoWN films are grown at a temperature of similar to 520(degrees)C using Ti, V, Nb, and Mo targets operating in the direct current magnetron sputtering mode, while the W target, operated by high power impulse magnetron sputtering (HiPIMS), provides a source of heavy ions. The energy of the metal ions EW+ is controlled in the range from 80 to 620 eV by varying the amplitude of the substrate bias pulses V-s, synchronized with the metal-ion-rich phase of HiPIMS pulses. We demonstrate that W(+ )irradiation provides dynamic recoil mixing of the film-forming components in the near-surface atomic layers. For EW+ >= 320 eV the multilayer formation phenomena, inherent for this deposition geometry, are suppressed and, hence, compositionally uniform HESN films are obtained, as confirmed by the microstructural and elemental analysis.(c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/)

Place, publisher, year, edition, pages
A V S AMER INST PHYSICS , 2023. Vol. 41, no 6, article id 063108
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Materials Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-198948DOI: 10.1116/6.0003065ISI: 001084540600001OAI: oai:DiVA.org:liu-198948DiVA, id: diva2:1809822
Note

Funding Agencies|SSF; Swedish Research Council VR; Swedish Energy Agency; aforsk Foundation [UKR22-0031]; Knut and Alice Wallenberg (KAW) Foundation [2018-03957]; Swedish Research Council VR-RFI [51201-51201]; Wallenberg Initiative Materials Science for Sustainability (WISE) - Knut and Alice Wallenberg Foundation [22-4]; Knut and Alice Wallenberg Foundation [CTS 20:150]; Swedish National Infrastructure in Advanced Electron Microscopy [2019_00191]; Polish National Agency for Academic Exchange; [2021-00171]; [RIF21-0026]; [BPN/BEK/2021/1/00366/U/00001]

Available from: 2023-11-06 Created: 2023-11-06 Last updated: 2023-11-06

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Rogoz, VladyslavPshyk, OleksandrWicher, BartoszPalisaitis, JustinasLu, JunPetrov, IvanHultman, LarsGreczynski, Grzegorz
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Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
Materials Chemistry

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