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Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Univ Iceland, Iceland.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. (Competence Centre for III-Nitride Technology C3NiT-Janzén)ORCID iD: 0000-0002-0399-8369
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. SweGaN, Olaus Magnusvag 48A, SE-58330 Linkoping, Sweden. (Competence Centre for III-Nitride Technology C3NiT-Janzén)
Griffith Univ, Australia.
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2023 (English)In: APL Materials, E-ISSN 2166-532X, Vol. 11, no 11, article id 111121Article in journal (Refereed) Published
Abstract [en]

Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal-oxide-semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO2 at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.

Place, publisher, year, edition, pages
AIP Publishing , 2023. Vol. 11, no 11, article id 111121
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-199451DOI: 10.1063/5.0160287ISI: 001106531000002OAI: oai:DiVA.org:liu-199451DiVA, id: diva2:1817081
Note

Funding Agencies|Icelandic Centre for Research (Rannis) [185412-052]; University of Iceland Research Fund; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the Competence Center Program [2022-03139]; Swedish Foundation for Strategic Research [EM16-0024]

Available from: 2023-12-05 Created: 2023-12-05 Last updated: 2024-05-01

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Persson, Axel R.

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Persson, Axel R.Chen, Jr-TaiUl-Hassan, JawadDarakchieva, VanyaSveinbjörnsson, Einar
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