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Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC))ORCID iD: 0000-0002-6363-4962
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC))
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Center for III-Nitride Technology, C3NiT–Janzén; Terahertz Materials Analysis Center (THeMAC))ORCID iD: 0000-0002-8827-7404
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Terahertz Materials Analysis Center (THeMAC))ORCID iD: 0000-0002-7626-1181
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2024 (English)In: APL Materials, E-ISSN 2166-532X, Vol. 12, no 2, article id 021114Article in journal (Refereed) Published
Abstract [en]

Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)

Place, publisher, year, edition, pages
AIP Publishing , 2024. Vol. 12, no 2, article id 021114
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-201324DOI: 10.1063/5.0176188ISI: 001162439300006OAI: oai:DiVA.org:liu-201324DiVA, id: diva2:1842469
Note

Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA) under the Competence Center Program [2022-03139]; Lund University; Linkoping University; Chalmers University of Technology; Ericsson; Epiluvac; FMV; Gotmic; Hexagem; Hitachi Energy; UMS; On Semiconductor; Swedish Research Council VR; Region Skane SAAB; Swedish Foundation for Strategic Research; SweGaN; Swedish Government Strategic Research Area NanoLund; Volvo Cars; Materials Science on Functional Materials at Linkoeping University, Faculty Grant SFO Mat LiU; National Science Foundation; EPSCoR RII Track-1: Emergent Quantum Materials and Technologies (EQUATE) [2016-00889, 2022-04812]; Air Force Office of Scientific Research [RIF14-055, EM16-0024]; University of Nebraska Foundation; J. A. Woollam Foundation [2009-00971]; [ECCS 2329940]; [OIA-2044049]; [FA9550-19-S-0003]; [FA9550-21-1-0259]; [FA9550-23-1-0574 DEF]

Available from: 2024-03-05 Created: 2024-03-05 Last updated: 2024-03-05

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