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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Solid State Physics and NanoLund, Lund University, Lund, 22100, Sweden. (Center for III-Nitride Technology (C3NiT—Janzén); Terahertz Materials Analysis Center (THeMAC))
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Solid State Physics and NanoLund, Lund University, Lund, 22100, Sweden. (Center for III-Nitride Technology (C3NiT—Janzén); Terahertz Materials Analysis Center (THeMAC))ORCID iD: 0000-0001-7344-1518
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Center for III-Nitride Technology (C3NiT—Janzén); Terahertz Materials Analysis Center (THeMAC))ORCID iD: 0000-0003-4902-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. (Center for III-Nitride Technology (C3NiT—Janzén); Terahertz Materials Analysis Center (THeMAC))ORCID iD: 0000-0002-8827-7404
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2023 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 134, no 18, article id 185701Article in journal (Refereed) Published
Abstract [en]

Al xGa 1−xN/GaN high-electron-mobility transistor (HEMT) structures are key components in electronic devices operating at gigahertz or higher frequencies. In order to optimize such HEMT structures, understanding their electronic response at high frequencies and room temperature is required. Here, we present a study of the room temperature free charge carrier properties of the two-dimensional electron gas (2DEG) in HEMT structures with varying Al content in the Al xGa 1−xN barrier layers between x=0.07 and x=0.42⁠. We discuss and compare 2DEG sheet density, mobility, effective mass, sheet resistance, and scattering times, which are determined by theoretical calculations, contactless Hall effect, capacitance-voltage, Eddy current, and cavity-enhanced terahertz optical Hall effect (THz-OHE) measurements using a low-field permanent magnet (0.6 T). From our THz-OHE results, we observe that the measured mobility reduction from x=0.13 to x=0.42 is driven by the decrease in 2DEG scattering time, and not the change in effective mass. For x<0.42⁠, the 2DEG effective mass is found to be larger than for electrons in bulk GaN, which in turn, contributes to a decrease in the principally achievable mobility. From our theoretical calculations, we find that values close to 0.3 m0 can be explained by the combined effects of conduction band nonparabolicity, polarons, and hybridization of the electron wavefunction through penetration into the barrier layer.

Place, publisher, year, edition, pages
American Institute of Physics Inc. , 2023. Vol. 134, no 18, article id 185701
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-201580DOI: 10.1063/5.0163754Scopus ID: 2-s2.0-85176345317OAI: oai:DiVA.org:liu-201580DiVA, id: diva2:1844131
Note

Funding Agencies|Foundation for Strategic Research, (2021-00171, RIF21-0026); Swedish Research Council VR, (2016-00889, 2022-04812); University of Nebraska Foundation; National Science Foundation, NSF, (NSF DMR 1808715); Air Force Office of Scientific Research, AFOSR, (FA9550-18-1-0360, FA9550-19-S-0003, FA9550-21-1-0259); Office of Experimental Program to Stimulate Competitive Research, EPSCoR, (OIA-2044049); J. A. Woollam Foundation; Stiftelsen för Strategisk Forskning, SSF, (2009-00971, EM16-0024, RIF14-055, STP19-0008); VINNOVA, (2022-03139); Knut och Alice Wallenbergs Stiftelse; Vetenskapsrådet, VR

Available from: 2024-03-13 Created: 2024-03-13 Last updated: 2024-03-13

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Knight, Sean RobertRichter, SteffenPapamichail, AlexisKuhne, PhilippArmakavicius, NerijusGuo, ShiqiPersson, Axel R.Stanishev, ValleryPersson, Per O. Å.Paskov, Plamen P.Schubert, MathiasDarakchieva, Vanya
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