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Superhard oxidation-resistant Ti1-xAlxBy thin films grown by hybrid HiPIMS/DCMS co-sputtering diboride targets without external substrate heating
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Warsaw Univ Technol, Poland.ORCID-id: 0000-0001-7104-3196
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Empa Swiss Fed Labs Mat Sci & Technol, Switzerland.ORCID-id: 0000-0001-9237-6512
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0001-7378-8554
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.ORCID-id: 0000-0002-3083-7536
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2024 (engelsk)Inngår i: Materials & design, ISSN 0264-1275, E-ISSN 1873-4197, Vol. 238, artikkel-id 112727Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Ti1-xAlxBy films (0.40 <= x <= 0.76, and 1.81 <= y <= 2.03) combining good mechanical properties and high-temperature oxidation resistance are demonstrated. Layers are grown using a hybrid high-power impulse and dc magnetron co-sputtering employing two target configurations (AlB2-HiPIMS/TiB2-DCMS and TiB2-HiPIMS/AlB2-DCMS) and no external substrate heating. Near-stoichiometric B content are achieved by co-sputtering two diboride targets. Time-resolved ion mass spectrometry analyses reveal that the ionization of the DCMS flux (Al) is much higher during TiB2-HiPIMS/AlB2-DCMS. The effect is caused by the difference in the first ionization potentials and the ionization probabilities of sputtered metals and results in lower B/metal ratios in films grown in this configuration. The B/metal ratio in the single-phase Ti1-xAlxBy decreases with increasing Al content, which is explained by the change between angular distribution of Ti and Al atoms. Alloying with Al improves the high-temperature oxidation resistance: the thickness of the oxide-scale forming after 1 h anneal at 800 degrees C decreases more than 15 times upon increasing x from 0.36 to 0.74. Ti1-xAlxBy films with 0.58 <= x <= 0.67 offer the best compromise between high-temperature oxidation resistance and mechanical properties with an average oxide scale thickness 90-180 nm and the hardness of 34-38 GPa.

sted, utgiver, år, opplag, sider
ELSEVIER SCI LTD , 2024. Vol. 238, artikkel-id 112727
Emneord [en]
Transition metal diboride thin films; Mechanical properties; Oxidation resistance; Magnetron sputtering; HiPIMS; Ion mass spectrometry
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Identifikatorer
URN: urn:nbn:se:liu:diva-202349DOI: 10.1016/j.matdes.2024.112727ISI: 001185963500001OAI: oai:DiVA.org:liu-202349DiVA, id: diva2:1851047
Merknad

Funding Agencies|Uppsala University; SSF for access to ARTEMI [2021-00171, RIF21-0026]; Wallenberg Initiative Materials Science for Sustainability (WISE) - Knut and Alice Wallenberg Foundation; Polish Na-tional Agency for Academic Exchange; Bekker Programme [BPN/BEK/2021/1/00366/U/00001]; Warsaw University of Technology within the Excellence Initiative [1820/74/Z09/2023]

Tilgjengelig fra: 2024-04-12 Laget: 2024-04-12 Sist oppdatert: 2024-04-12

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