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Ion-assisted Physical Vapor Deposition for enhanced film properties on non-flat surfaces
Linköpings universitet, Institutionen för fysik, kemi och biologi, Plasma och beläggningsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0001-9140-6724
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
University of Iceland, Reykjavik.
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2005 (Engelska)Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 23, nr 2, s. 278-280Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

We have synthesized Ta thin films on Si substrates placed along a wall of a 2-cm-deep and 1-cm-wide trench, using both a mostly neutral Ta flux by conventional dc magnetron sputtering (dcMS) and a mostly ionized Ta flux by high-power pulsed magnetron sputtering (HPPMS). Structure of the grown films was evaluated by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The Ta thin film grown by HPPMS has a smooth surface and a dense crystalline structure with grains oriented perpendicular to the substrate surface, whereas the film grown by dcMS exhibits a rough surface, pores between the grains, and an inclined columnar structure. The improved homogeneity achieved by HPPMS is a direct consequence of the high ion fraction of sputtered species.

Ort, förlag, år, upplaga, sidor
2005. Vol. 23, nr 2, s. 278-280
Nyckelord
tantalum, ion beam assisted deposition, sputter deposition, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, surface structure, surface roughness, porosity, metallic thin films
Nationell ämneskategori
Naturvetenskap
Identifikatorer
URN: urn:nbn:se:liu:diva-13376DOI: 10.1116/1.1861049OAI: oai:DiVA.org:liu-13376DiVA, id: diva2:20534
Tillgänglig från: 2005-10-25 Skapad: 2005-10-25 Senast uppdaterad: 2017-12-13
Ingår i avhandling
1. Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
Öppna denna publikation i ny flik eller fönster >>Plasma Characterization & Thin Film Growth and Analysis in Highly Ionized Magnetron Sputtering
2005 (Engelska)Doktorsavhandling, sammanläggning (Övrigt vetenskapligt)
Abstract [en]

The present thesis addresses two research areas related to film growth in a highly ionized magnetron sputtering system: plasma characterization, and thin film growth and analysis. The deposition technique used is called high power pulsed magnetron sputtering (HPPMS). Characteristic for this technique are high energy pulses (a few Joules) of length 50-100 µs that are applied to the target (cathode) with a duty time of less than 1 % of the total pulse time. This results in a high electron density in the discharge (>1x1019 m-3) and leads to an increase of the ionization fraction of the sputtered material reaching up to 70 % for Cu.

In this work the spatial and temporal evolution of the plasma parameters, including the electron energy distribution function (EEDF), the electron density and the electron temperature are determined using electrostatic Langmuir probes. Electron temperature measurements reveal a low effective temperature of 2-3 eV. The degree of ionization in the HPPMS discharge is explained in light of the self-sputtering yield of the target material. A simple model is therefore provided in order to compare the sputtering yield in HPPMS and that in dc magnetron sputtering (dcMS) for the same average power.

Thin Ta films are grown using HPPMS and dcMS and their properties are studied. It is shown that enhanced microstructure and morphology of the deposited films is achieved by HPPMS. The Ta films are also deposited at a number of substrate inclination angles ranging from 0o (i.e., facing the target surface) up to 180 o (i.e., facing away from the target). Deposition rate measurements performed at all inclination angles for both techniques, reveal that growth made using HPPMS resulted in an improved film thickness at higher inclination. Furthermore, the high ionization of the Ta atoms in HPPMS discharge is found to allow for phase tailoring of the deposited films at all inclination angles by applying a bias voltage to the substrate. Finally, highly ionized magnetron sputtering of a compound MAX-phase material (Ti3SiC2) is performed, demonstrating that the HPPMS discharge could also be used to tailor the composition of the growing Ti-Si-C films.

Ort, förlag, år, upplaga, sidor
Institutionen för fysik, kemi och biologi, 2005
Serie
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 948
Nyckelord
Highly ionized pulsed magnetron sputtering, HPPMS, HPPIMS, thin film, plasma analysis, Langmuir probe
Nationell ämneskategori
Teknik och teknologier
Identifikatorer
urn:nbn:se:liu:diva-4147 (URN)91-85299-40-5 (ISBN)
Disputation
2005-06-03, 10:15 (Engelska)
Opponent
Handledare
Anmärkning

On the day of the public defence of the doctoral thesis, the status of articles III and IV was Submitted. The titles of papers VI and VII changed between their manuscript forms and when they were published.

Tillgänglig från: 2005-10-25 Skapad: 2005-10-25 Senast uppdaterad: 2023-01-26

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Alami, JonesPersson, Per O. Å.Music, DenisBöhlmark, JohanHelmersson, Ulf

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Alami, JonesPersson, Per O. Å.Music, DenisBöhlmark, JohanHelmersson, Ulf
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Plasma och beläggningsfysikTekniska högskolanTunnfilmsfysik
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Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
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