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The location and effects of Si in (Ti1-xSix)N-y thin films
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
Seco Tools AB.
Seco Tools AB.
Vise andre og tillknytning
2009 (engelsk)Inngår i: JOURNAL OF MATERIALS RESEARCH, ISSN 0884-2914, Vol. 24, nr 8, s. 2483-2498Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

(Ti1-xSix)N-y (0 andlt;= x andlt;= 0.20; 0.99 andlt;= y(x) andlt;= 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x andlt;= 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x andgt; 0.09 haven a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 10(14) cm(-2) is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 degrees C due to segregation of SiN, to the grain boundaries. During annealing at 1100-1200 degrees C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

sted, utgiver, år, opplag, sider
2009. Vol. 24, nr 8, s. 2483-2498
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-19999DOI: 10.1557/jmr.2009.0299OAI: oai:DiVA.org:liu-19999DiVA, id: diva2:232454
Tilgjengelig fra: 2009-08-24 Laget: 2009-08-24 Sist oppdatert: 2019-01-28

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