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Luminescence study of Si/Ge quantum dots
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik.
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2003 (engelsk)Inngår i: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 16, nr 3-4, s. 476-480Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We present a photoluminescence (PL) study of Ge quantum dots embedded in Si. Two different types of recombination processes related to the Ge quantum dots are observed in temperature-dependent PL measurements. The Ge dot-related luminescence peak near 0.80 eV is ascribed to the spatially indirect recombination in the type-II band lineup, while a high-energy peak near 0.85 eV has its origin in the spatially direct recombination. A transition from the spatially indirect to the spatially direct recombination is observed as the temperature is increased. The PL dependence of the excitation power shows an upshift of the Ge quantum dot emission energy with increasing excitation power density. The blueshift is ascribed to band bending at the type-II Si/Ge interface at high carrier densities. Comparison is made with results derived from measurements on uncapped samples. For these uncapped samples, no energy shifts due to excitation power or temperatures are observed in contrast to the capped samples.

sted, utgiver, år, opplag, sider
2003. Vol. 16, nr 3-4, s. 476-480
Emneord [en]
Yt-och halvledarfysik
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-22162DOI: 10.1016/S1386-9477(02)00652-5Lokal ID: 1279OAI: oai:DiVA.org:liu-22162DiVA, id: diva2:242475
Tilgjengelig fra: 2009-10-07 Laget: 2009-10-07 Sist oppdatert: 2017-12-13

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Larsson, MatsElfving, AndersHoltz, Per-OlofHansson, GöranNi, Wei-Xin

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