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A high density, low leakage, 5T SRAM for embedded caches
EK. ISY, LiU.
Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.
MoSys.
Linköping University, The Institute of Technology. Linköping University, Department of Electrical Engineering, Electronic Devices.ORCID iD: 0000-0001-8922-2360
2004 (English)In: ESSCIRC 2004,2004, Leuven: IEEE, Inc. , 2004, p. 215-Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Leuven: IEEE, Inc. , 2004. p. 215-
Keywords [en]
high density, low leakage, 5T SRAM
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-22511Local ID: 1770OAI: oai:DiVA.org:liu-22511DiVA, id: diva2:242824
Available from: 2009-10-07 Created: 2009-10-07 Last updated: 2019-09-05

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Andersson, StefanAlvandpour, Atila

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