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Synchrotron radiation studies of the SiO2/SiC(0001) interface
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
2004 (Engelska)Ingår i: JOURNAL OF PHYSICS-CONDENSED MATTER ISSN (0953-8984): Volume: 16   Issue: 33   Special Issue: SI, Institute of Physics Publishing (IOPP), 2004, s. S3423-S3434Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

Two questions thought to have a significant effect on SiC-MOS device characteristics are treated. The existence of carbon clusters or carbon containing by-products and the existence of sub-oxides at the SiO2/SiC interface. Results of photoemission studies using synchrotron radiation of the interface of the Si-terminated surface of n-type SiC(0001) crystals are presented. The results show that no carbon clusters or carbon containing by-product can. be detected at the interface of in situ or ex situ grown samples with an oxide layer thickness larger than similar to10 Angstrom. The presence of sub-oxides at the SiO2/SiC interface was predicted in a theoretical calculation and has been revealed in Si 2p core level data by several groups. These results were not unanimous; significant differences in the number of sub-oxide and shifts were reported. A study also including the Si 1s core level and Si KLL Auger transitions was therefore made. These data show the presence of only one sub-oxide at the interface, assigned to Si1+ oxidation states. The SiO2 chemical shift is shown to exhibit a dependence on oxide thickness, similar to but smaller in magnitude than the thickness dependence earlier revealed for SiO2/Si.

Ort, förlag, år, upplaga, sidor
Institute of Physics Publishing (IOPP), 2004. s. S3423-S3434
Nationell ämneskategori
Naturvetenskap
Identifikatorer
URN: urn:nbn:se:liu:diva-24584DOI: 10.1088/0953-8984/16/33/002ISI: 000223706500003Lokalt ID: 6758OAI: oai:DiVA.org:liu-24584DiVA, id: diva2:244905
Konferens
Symposium on Synchrotron Radiation for Advanced Materials Analysis and Processing held at the ICMAT 2003/IUMRS-ICA 2003, Singapore, DEC 07-12, 2003
Anmärkning

Article number: PII: S0953-8984(04)81036-1

Tillgänglig från: 2009-10-07 Skapad: 2009-10-07 Senast uppdaterad: 2012-08-27Bibliografiskt granskad

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Johansson, LeifVirojanadara, Chariya

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