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Phonon mode behavior in strained wurtzite AlN/GaN superlattices
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
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2005 (engelsk)Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 71, nr 11, s. 115329-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We have studied phonons in AlN/GaN superlattices with different periods but a constant well-to-barrier ratio using a combination of infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The strain evolution in the superlattice structures is assessed by high-resolution x-ray diffraction and reciprocal space mapping. We have identified E1(TO), A 1(LO) and E2 localized, and E1(LO) and A 1(TO) delocalized superlattice modes. The dependencies of their frequencies on in-plane strain are analyzed and discussed, and the strain-free frequencies of the superlattice modes are estimated. A good agreement between theory and experiment is found in the case of GaN localized modes, while large deviations between theoretically estimated and experimentally determined frequency shifts are observed for the AlN localized modes. The delocalization effect on the A1(TO) and E1(LO) phonons, as well as the free-carrier effect on the E1(LO) phonon are also discussed. ©2005 The American Physical Society.

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2005. Vol. 71, nr 11, s. 115329-
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URN: urn:nbn:se:liu:diva-30717DOI: 10.1103/PhysRevB.71.115329Lokal ID: 16329OAI: oai:DiVA.org:liu-30717DiVA, id: diva2:251540
Tilgjengelig fra: 2009-10-09 Laget: 2009-10-09 Sist oppdatert: 2017-12-13

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