liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-7155-7103
Show others and affiliations
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 22, p. 222110-Article in journal (Refereed) Published
Abstract [en]

Dilute-nitride Ga0.44In0.56NyP1-y alloys with y=0-0.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic defects were found to act as centers of nonradiative recombination. Resolved hyperfine structure for one of the detected ODMR signals suggests involvement of a Ga-interstitial or an As-antisite in the structure of the related defect. © 2005 American Institute of Physics.

Place, publisher, year, edition, pages
2005. Vol. 86, no 22, p. 222110-
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-30723DOI: 10.1063/1.1943487Local ID: 16336OAI: oai:DiVA.org:liu-30723DiVA, id: diva2:251546
Available from: 2009-10-09 Created: 2009-10-09 Last updated: 2017-12-13

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records

Vorona, IgorIzadifard, MortezaBuyanova, IrinaChen, Weimin

Search in DiVA

By author/editor
Vorona, IgorIzadifard, MortezaBuyanova, IrinaChen, Weimin
By organisation
Functional Electronic MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologySemiconductor Materials
In the same journal
Applied Physics Letters
Natural SciencesCondensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 73 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf