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Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques
Henry, Anne
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
ORCID iD:
0000-0001-5768-0244
ul-Hassan, Jawad
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Bergman, Peder
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Hallin, Christer
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Janzén, Erik
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2006 (English)
In:
Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 12, no 8-9, p. 475-482
Article in journal (Refereed) Published
Place, publisher, year, edition, pages
Weinheim: WILEY-VCH Verlag GmbH & Co , 2006. Vol. 12, no 8-9, p. 475-482
National Category
Natural Sciences
Identifiers
URN:
urn:nbn:se:liu:diva-36449
Local ID: 31386
OAI: oai:DiVA.org:liu-36449
DiVA, id:
diva2:257297
Available from:
2009-10-10
Created:
2009-10-10
Last updated:
2017-12-13
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Henry, Anne
ul-Hassan, Jawad
Bergman, Peder
Hallin, Christer
Janzén, Erik
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ul-Hassan, Jawad
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Janzén, Erik
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