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On the lattice parameters of GaN
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
2007 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, nr 3, s. 031911-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The lattice parameters of low-defect density, undoped bulk GaN fabricated by hydride vapor phase epitaxy (HVPE) on (0001) sapphire and subsequent substrate removal, are precisely determined using high-resolution x-ray diffraction. The obtained values, c=5.18523 Å and a=3.18926 Å, are compared with the lattice parameters of freestanding HVPE GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high-pressure technique and homoepitaxial GaN is made, and significant differences in the lattice parameters are found. The observed differences are discussed and a possible explanation is suggested. © 2007 American Institute of Physics.

sted, utgiver, år, opplag, sider
2007. Vol. 91, nr 3, s. 031911-
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URN: urn:nbn:se:liu:diva-38674DOI: 10.1063/1.2753122Lokal ID: 45291OAI: oai:DiVA.org:liu-38674DiVA, id: diva2:259523
Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2017-12-13

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