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On the lattice parameters of GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-8112-7411
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 3, p. 031911-Article in journal (Refereed) Published
Abstract [en]

The lattice parameters of low-defect density, undoped bulk GaN fabricated by hydride vapor phase epitaxy (HVPE) on (0001) sapphire and subsequent substrate removal, are precisely determined using high-resolution x-ray diffraction. The obtained values, c=5.18523 Å and a=3.18926 Å, are compared with the lattice parameters of freestanding HVPE GaN from different sources and found to be representative for state-of-the-art undoped HVPE bulk GaN material. A comparison with bulk GaN fabricated by the high-pressure technique and homoepitaxial GaN is made, and significant differences in the lattice parameters are found. The observed differences are discussed and a possible explanation is suggested. © 2007 American Institute of Physics.

Place, publisher, year, edition, pages
2007. Vol. 91, no 3, p. 031911-
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-38674DOI: 10.1063/1.2753122Local ID: 45291OAI: oai:DiVA.org:liu-38674DiVA, id: diva2:259523
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2023-12-28

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