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Changes in optical properties of MnAs thin films on GaAs(001) induced by a- to B-phase transition
Inst de NanoSciences de Paris - CNRS, Université Pierre et Marie Curie, France.
Inst de NanoSciences de Paris - CNRS, Université Pierre et Marie Curie, France.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik. Linköpings universitet, Tekniska högskolan.ORCID-id: 0000-0001-9229-2028
Inst de NanoSciences de Paris - CNRS, Université Pierre et Marie Curie, France.
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2008 (engelsk)Inngår i: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 205, nr 4, s. 859-862Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

MnAs layers with 45 nm thickness were grown epitaxially on GaAs(001) substrates. Ellipsometry measurements were made in the spectral range 0.045 eV to 6 eV as a function of temperature (between –10 °C and 50 °C) at 70° of incidence. In this way the transition from the hexagonal α-phase to the orthorhombic β-phase could be monitored. Non-zero off-diagonal elements of the Jones matrix for an azimuth of 38° off the [10] axis of the substrate indicate that the optical functions of MnAs are anisotropic in both phases. The optical conductivity exhibits low-energy interband transitions around 0.3 eV, more clearly seen in the α-phase than in the β-phase. Extrapolation of the optical conductivity to zero frequency confirms that the α-phase is about two times more conducting than the β-phase. A broad structure is observed in the visible range around 3 eV. The α-phase is characterised by an anisotropy induced energy difference of this structure with a maximum at 2.8 eV for the extraordinary index and at 3.15 eV for the ordinary index. This difference vanishes in the β-phase in which anisotropy mainly induces changes in amplitude of the 3 eV structure. The assignment of the structures will be discussed.

sted, utgiver, år, opplag, sider
Wiley-VCH Verlagsgesellschaft, 2008. Vol. 205, nr 4, s. 859-862
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Identifikatorer
URN: urn:nbn:se:liu:diva-42729DOI: 10.1002/pssa.200777782ISI: 000255702600033Lokal ID: 68441OAI: oai:DiVA.org:liu-42729DiVA, id: diva2:263586
Konferanse
4th International Conference on Spectroscopic Ellipsometry (ICSE 4), Stockholm, Sweden, 11–15 June 2007
Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2017-12-13bibliografisk kontrollert

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