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Charge state control of single InAs/GaAs quantum dots by means of an external magnetic field
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska högskolan.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
2008 (engelsk)Inngår i: in PHYSICS OF SEMICONDUCTORS, vol 1199, AIP , 2008, s. 297-298Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

Individual InAs/GaAs quantum dots (QDs) are studied with micro-photoluminescence in the presence of an applied external magnetic field. Attention is focused on the redistribution between the spectral lines of a single QD observed at increased external magnetic field when the magnetic field is applied parallel to the growth direction (Faraday geometry). The effect is shown to be transport related as the electron drift velocity in the QD-plane is decreased by the applied magnetic field and this affects the probability for electron capture into the QD.

sted, utgiver, år, opplag, sider
AIP , 2008. s. 297-298
Emneord [en]
quantum dot, photoluminescence, magnetic field, Faraday, Voigt, transport
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-44292DOI: 10.1063/1.3295418ISI: 000281590800140Lokal ID: 76185ISBN: 978-073540736-7 (tryckt)OAI: oai:DiVA.org:liu-44292DiVA, id: diva2:265154
Konferanse
ICPS 29th International Conference on the Physics of Semiconductors,2008
Tilgjengelig fra: 2009-10-10 Laget: 2009-10-10 Sist oppdatert: 2014-08-27

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