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The 3.466 eV Bound Exciton in GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2001 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 228, no 2, p. 489-492Article in journal (Refereed) Published
Abstract [en]

 We discuss the available optical data for the 3.466 eV bound exciton in GaN, which has been a controversial issue in the recent literature. We conclude that the experimental results are only consistent with the identification as an exciton bound at a neutral acceptor with a spin-like bound hole. The chemical identity is still not clear.

Place, publisher, year, edition, pages
2001. Vol. 228, no 2, p. 489-492
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45109DOI: 10.1002/1521-3951(200111)228:2<489::AID-PSSB489>3.0.CO;2-NLocal ID: 79718OAI: oai:DiVA.org:liu-45109DiVA, id: diva2:265971
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2018-03-06

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Monemar, BoChen, WeiminPaskov, PlamenPaskova, TanjaPozina, GaliaBergman, Peder

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Monemar, BoChen, WeiminPaskov, PlamenPaskova, TanjaPozina, GaliaBergman, Peder
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