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Two-dimensional electron gas density in Al1-x InMx N/AlN/GaN heterostructures (0.03=x=0.23)
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
Institute of Quantum Electronics and Photonics, Ecole Polytechnique F´d´rale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
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2008 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, nr 9, s. 093714-Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of ~17.5%, i.e., it can be grown either tensely or compressively on GaN. The effect of strain on the polarization induced sheet charge density at the Al1-x Inx N/AlN/GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick AlN interlayer. The barrier indium content ranges at 0.03=x=0.23 for 6 nm thick barriers and 0.07=x=0.21 for 14 nm thick barriers. It is found that the two-dimensional electron gas (2DEG) density varies between (3.5±0.1) × 1013 cm-2 and (2.2±0.1) × 1013 cm-2 for 14 nm thick barriers. Finally, a 2DEG density up to (1.7±0.1) × 1013 cm-2 is obtained for a nearly LM AlInN barrier with ~14.5% indium on GaN as thin as 6 nm. © 2008 American Institute of Physics.

sted, utgiver, år, opplag, sider
2008. Vol. 103, nr 9, s. 093714-
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URN: urn:nbn:se:liu:diva-46133DOI: 10.1063/1.2917290OAI: oai:DiVA.org:liu-46133DiVA, id: diva2:267029
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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