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Grazing incident asymmetric X-ray diffraction of beta-FeSi2 layers, produced by ion beam synthesis
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
2004 (engelsk)Inngår i: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 76, nr 02-Mar, s. 277-280Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The crystal structure of beta-FeSi2 phase, prepared by ion beam synthesis (IBS) method, followed by rapid thermal annealing (RTA) is investigated by grazing incident asymmetric X-ray diffraction (GIAXRD). The X-ray spectra, obtained at different grazing angles, indicated that the beta-FeSi2 phase is formed in the whole implantation range. From the comparison of the reflections intensities ratios, it is found that in the metal-deficient regions, where the beta-FeSi2 phase is present in the form of precipitates, the crystallites orientation is influenced by the one of the silicon substrates, while the orientation in the metal-rich region is different and depends on the annealing temperature. (C) 2004 Elsevier Ltd. All rights reserved.

sted, utgiver, år, opplag, sider
2004. Vol. 76, nr 02-Mar, s. 277-280
Emneord [en]
beta-FeSi2, layers, ion beam synthesis, crystal structure
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-46167DOI: 10.1016/j.vacuum.2004.07.035OAI: oai:DiVA.org:liu-46167DiVA, id: diva2:267063
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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