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Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0001-9140-6724
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.ORCID-id: 0000-0002-2837-3656
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2004 (engelsk)Inngår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 224, nr 01-Apr, s. 46-50Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The epitaxial quality of non-selective and selective deposition of Si1-x-yGexCy (0 less than or equal to x less than or equal to 0.30, 0 less than or equal to y less than or equal to 0.02) layers has been optimized by using high-resolution reciprocal lattice mapping (HRRLM). The main goal was to incorporate a high amount of substitutional carbon atoms in Si or Si1-xGex matrix without creating defects. The carbon incorporation behavior was explained by chemical and kinetic effects of the reactant gases during epitaxial process. Although high quality epitaxial Si1-yCy layers can be deposited, lower electron mobility compared to Si layers was observed. (C) 2003 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2004. Vol. 224, nr 01-Apr, s. 46-50
Emneord [en]
chemical vapor deposition, epitaxy, SiGeC alloys, high-resolution reciprocal lattice mapping
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-46275DOI: 10.1016/j.apsusc.2003.08.026OAI: oai:DiVA.org:liu-46275DiVA, id: diva2:267171
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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