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Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Fak. für Phys./Geowiss., Iniversität Leipzig, 04103 Leipzig, Germany.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
Vise andre og tillknytning
2003 (engelsk)Konferansepaper, Publicerat paper (Fagfellevurdert)
Abstract [en]

The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function. © 2003 Elsevier B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2003. Vol. 340-342, s. 416-420
Serie
PHYSICA B-CONDENSED MATTER, ISSN 0921-4526 ; 340
Emneord [en]
AlN, Infrared ellipsometry, Phonons, Strain
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-46349DOI: 10.1016/j.physb.2003.09.059OAI: oai:DiVA.org:liu-46349DiVA, id: diva2:267245
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2011-09-19

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