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Back-side etching A tool for making morphology gradients in porous silicon
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik.ORCID-id: 0000-0001-9229-2028
2002 (engelsk)Inngår i: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 149, nr 12Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A new method for preparing morphology gradients in electrochemically etched porous silicon layers in presented. The idea is to etch on the back side of the anode and thus utilize and inhomogenous electric field to control the pore size along a surface. The etching procedure resulted in a complex gradient in pore size, porosity, and porous layer thickness, which was studied by spectroscopic ellipsometry and scanning electron microscopy. The gradients are of interest, e.g., for biomaterials research, bio-sensor applications, and for basic studies of adsorption of organic molecules, like proteins. In order to investigate the potential of the gradient surfaces for protein adsorption studies, these were exposed to human serum albumin, and a gradient in the amount of adsorbed protein was observed.

sted, utgiver, år, opplag, sider
2002. Vol. 149, nr 12
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-46823DOI: 10.1149/1.1519851OAI: oai:DiVA.org:liu-46823DiVA, id: diva2:267719
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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Tengvall, PenttiLundström, IngemarArwin, Hans

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