liu.seSearch for publications in DiVA
Endre søk
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf
Cathodoluminescence identification of donor-acceptor related emissions in as-grown 4H-SiC layers
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.ORCID-id: 0000-0002-7042-2351
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.ORCID-id: 0000-0001-5768-0244
Royal Institute of Technology, PO Box E229, S-16440 Kista, Sweden.
Vise andre og tillknytning
2002 (engelsk)Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 91, nr 5, s. 2890-2895Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

A comparative analysis of cathodoluminescence spectra in 4H-SiC layers with different N, Al, and B content is reported. The layers were produced by sublimation epitaxy and residual impurity concentrations were determined by secondary ion mass spectrometry. Epilayers doped with B in a wide concentration range, 5×1015-3×1018cm-3, were achieved. Evidence of N, Al, and B related emissions by cathodoluminescence experiments is presented. Differences in the luminescence emitted by the layers are established that are attributed to different B content and impurity cooperation. The characteristics of broad green emission, originating from B-related centers, at 4.6 K, 300 K, as well as in high temperature annealed layers are discussed. The experimental results suggest that boron is involved in more than one deep acceptor center. © 2002 American Institute of Physics.

sted, utgiver, år, opplag, sider
2002. Vol. 91, nr 5, s. 2890-2895
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-47091DOI: 10.1063/1.1436293OAI: oai:DiVA.org:liu-47091DiVA, id: diva2:267987
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2024-03-01

Open Access i DiVA

Fulltekst mangler i DiVA

Andre lenker

Forlagets fulltekst

Person

Kakanakova-Georgieva, AneliaYakimova, RositsaHenry, AnneSyväjärvi, MikaelJanzén, Erik

Søk i DiVA

Av forfatter/redaktør
Kakanakova-Georgieva, AneliaYakimova, RositsaHenry, AnneSyväjärvi, MikaelJanzén, Erik
Av organisasjonen
I samme tidsskrift
Journal of Applied Physics

Søk utenfor DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric

doi
urn-nbn
Totalt: 112 treff
RefereraExporteraLink to record
Permanent link

Direct link
Referera
Referensformat
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Annet format
Fler format
Språk
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Annet språk
Fler språk
Utmatningsformat
  • html
  • text
  • asciidoc
  • rtf