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Thick film Au-gate field-effect devices sensitive to NO2
Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik. Linköpings universitet, Tekniska högskolan.
Laboratorio de Sensores, CITEI-National Institute of Industrial Technology, CC 157, 1650 San Martín, Argentina.
Aragón, R., Laboratorio de Películas Delgadas, Fac. de Ing., Univ. de Buenos Aires and PRINSO-CONICET-CITEFA, Paseo Colon 850, 1063 Cap. Fed., Argentina.
Institute of Physical and Theoretical Chemistry, University of Tübingen, auf der Morgenstelle 8, D-72076 Tübingen, Germany.
2002 (engelsk)Inngår i: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 81, nr 2-3, s. 296-300Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Screen printed thick film gold gate MOS capacitors are selectively sensitive to the presence of NO2 in air. Metallo-organic gold inks produce open gate structures, with positive flat-band-voltage shifts of 2.72mV/ppm at 140ppm of NO2 in air, comparable to PVD deposited thin film devices. Standard gold pastes are denser, coarser grained thick films of alloyed composition, which reverse the polarity of the flat-band-voltage shift. No cross sensitivity to H2 or NO is apparent. © 2002 Elsevier Science B.V. All rights reserved.

sted, utgiver, år, opplag, sider
2002. Vol. 81, nr 2-3, s. 296-300
Emneord [en]
Chemical gas sensors, Field effect, Nitrogen dioxide, Thick films
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-47128DOI: 10.1016/S0925-4005(01)00969-8OAI: oai:DiVA.org:liu-47128DiVA, id: diva2:268024
Tilgjengelig fra: 2009-10-11 Laget: 2009-10-11 Sist oppdatert: 2017-12-13

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