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Passivation of p-type dopants in 4H-SiC by hydrogen
Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Deák, P., Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
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2001 (Engelska)Ingår i: Physica B, Vols. 308-310, 2001, Vol. 308-310, s. 722-725Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]

Experimental investigations showed passivation of the p-type dopants B and Al in 4H-SiC by the formation of B+H and Al+H complexes. The dissociation energies of these complexes differed by 0.9 eV. Ab initio supercell calculations have been performed to investigate the interaction of H with B and Al in hexagonal 4H-SiC. The total energy, geometry and electronic structure of the possible complexes have been determined. Site dependencies have also been investigated. The most stable configurations were found with H at a bond center site next to B at the Si site, and with H at the antibonding site of a carbon atom which is first neighbor to Al at a Si site. Both the BSi+HBC and the AlSi+HAB(C) complexes turned out to be electrically inactive. The different structure of the passivated complexes explains the observed difference in their dissociation energy: the calculated difference of the binding energies of these complexes is 0.9 eV, which agrees well with the experimental finding. © 2001 Elsevier Science B.V. All rights reserved.

Ort, förlag, år, upplaga, sidor
2001. Vol. 308-310, s. 722-725
Nyckelord [en]
Aluminum, Boron, Hydrogen, Passivation, SiC
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Teknik och teknologier
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URN: urn:nbn:se:liu:diva-47216DOI: 10.1016/S0921-4526(01)00882-1OAI: oai:DiVA.org:liu-47216DiVA, id: diva2:268112
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ICDS21
Tillgänglig från: 2009-10-11 Skapad: 2009-10-11 Senast uppdaterad: 2010-12-09

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