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Improvement of ZnO thin film properties by application of ZnO buffer layers
Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine, Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, Sweden.
Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland.
Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland.
Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine.
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2007 (Engelska)Ingår i: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 308, nr 1, s. 93-98Artikel i tidskrift (Refereegranskat) Published
Abstract [en]

The effect of ZnO buffer layers prepared at different temperatures on the structural, optical and morphological properties of the ZnO main layer is reported. ZnO thin films (comprising a buffer and a main layer) were deposited on (0 0 0 1) c-sapphire substrates by PEMOCVD. Two-step growth regimes were applied to realize a homoepitaxial growth on ZnO buffers: low-temperature ZnO buffer layer deposited at Ts=300 °C and the main layer at Ts=500 °C, high-temperature ZnO buffer layer deposited at Ts=500 °C and the main layer at Ts=300 °C. For comparison, a sample grown at high-temperature Ts=500 °C by one-step procedure was used. The low-temperature buffer layer has shown the most beneficial effect on the structural and morphological properties, as expressed by the narrowing of the (0 0 2) diffraction peak (FWHM=0.07°) and crystallite size enlargement. However, the surface roughness of this sample is higher then that of the sample grown by one-step procedure and this needs further considerations. The photoluminescence results seem to support a conclusion that the application of a low-temperature buffer layer among the studied temperature regimes is the most advantageous. © 2007 Elsevier B.V. All rights reserved.

Ort, förlag, år, upplaga, sidor
2007. Vol. 308, nr 1, s. 93-98
Nyckelord [en]
A1. ZnO PEMOCVD, B1. LT ZnO buffer layer, B2. Structural quality
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Naturvetenskap
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URN: urn:nbn:se:liu:diva-48355DOI: 10.1016/j.jcrysgro.2007.06.034OAI: oai:DiVA.org:liu-48355DiVA, id: diva2:269251
Tillgänglig från: 2009-10-11 Skapad: 2009-10-11 Senast uppdaterad: 2017-12-12

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